{
  "id": "cond-mat/0508647",
  "version": "v2",
  "published": "2005-08-26T20:26:52.000Z",
  "updated": "2006-02-15T20:11:46.000Z",
  "title": "Quantum control of donor electrons at the Si-SiO2 interface",
  "authors": [
    "M. J. Calderon",
    "Belita Koiller",
    "Xuedong Hu",
    "S. Das Sarma"
  ],
  "comment": "Version accepted for publication in PRL",
  "journal": "Phys. Rev. Lett. 96, 096802 (2006)",
  "doi": "10.1103/PhysRevLett.96.096802",
  "categories": [
    "cond-mat.mes-hall",
    "quant-ph"
  ],
  "abstract": "Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2006-02-15T20:11:46.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum control",
      "si-sio2 interface",
      "donor electrons",
      "silicon quantum computer architecture",
      "external electric field"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}