{
  "id": "cond-mat/0406290",
  "version": "v1",
  "published": "2004-06-11T22:15:59.000Z",
  "updated": "2004-06-11T22:15:59.000Z",
  "title": "The effects of a magnetic barrier and a nonmagnetic spacer in tunnel structures",
  "authors": [
    "Ali A. Shokri",
    "Alireza Saffarzadeh"
  ],
  "comment": "15 pages, 5 figures",
  "journal": "J. Phys. : Condens. Matter 16 (2004) 4455",
  "doi": "10.1088/0953-8984/16/25/006",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and the nearly-free-electron-approximation the dependence of the tunnel magnetoresistance (TMR) and electron-spin polarization on the nonmagnetic layer thickness and the applied bias voltage are studied theoretically. The TMR and spin polarization show an oscillatory behavior as a function of the spacer thickness and the bias voltage. The oscillations originate from the quantum well states in the spacer, while the existence of the magnetic barrier gives rise to a strong spin polarization and high values of the TMR. Our results may be useful for the development of spin electronic devices based on coherent transport.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2004-06-11T22:15:59.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "magnetic barrier",
      "nonmagnetic spacer",
      "tunnel structures",
      "bias voltage",
      "magnetic tunnel junction"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 15,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}