{
  "id": "cond-mat/0404355",
  "version": "v1",
  "published": "2004-04-15T09:19:32.000Z",
  "updated": "2004-04-15T09:19:32.000Z",
  "title": "Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well",
  "authors": [
    "Yu. G. Arapov",
    "V. N. Neverov",
    "G. I. Harus",
    "N. G. Shelushinina",
    "M. V. Yakunin",
    "O. A. Kuznetsov",
    "A. de Visser",
    "L. Ponomarenko"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2004-04-15T09:19:32.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "2d hole gas",
      "zeeman splitting",
      "magnetoresistivity",
      "magnetic field perpendicular",
      "perpendicular magnetic field"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}