{
  "id": "cond-mat/0404254",
  "version": "v3",
  "published": "2004-04-12T11:00:41.000Z",
  "updated": "2004-06-11T23:25:12.000Z",
  "title": "Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields",
  "authors": [
    "R. F. Oliveira",
    "A. B. Henriques",
    "T. E. Lamas",
    "A. A. Quivy",
    "E. Abramof"
  ],
  "comment": "minor typing errors (minus sign in eq. (5))",
  "doi": "10.1088/0022-3727/37/21/002",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We have studied a 50/50\\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice photoluminescence, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2004-06-11T23:25:12.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "high magnetic fields",
      "miniband parameters",
      "doped superlattice",
      "measurement",
      "band gap renormalization"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}