{
  "id": "cond-mat/0403199",
  "version": "v1",
  "published": "2004-03-08T09:19:35.000Z",
  "updated": "2004-03-08T09:19:35.000Z",
  "title": "Conductance modulation in spin field-efect transistors under finite bias voltages",
  "authors": [
    "Liangbin Hu",
    "Ju Gao",
    "Shun-Qing Shen"
  ],
  "comment": "7 pages, 3 figures, to appear in Physical Review B, (April, 2004)",
  "journal": "Phys. Rev. B 69, 165304 (2004)",
  "doi": "10.1103/PhysRevB.69.165304",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only the gate-voltage controlled Rashba spin-orbit coupling but also depend on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2004-03-08T09:19:35.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "finite bias voltage",
      "conductance modulation",
      "spin field-efect transistors",
      "spin field-effect transistor",
      "controlled rashba spin-orbit coupling"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}