{ "id": "cond-mat/0304236", "version": "v1", "published": "2003-04-10T10:30:03.000Z", "updated": "2003-04-10T10:30:03.000Z", "title": "Effects of Polaron Formation in Semiconductor Quantum Dots on Transport Properties", "authors": [ "Tomoki Tasai", "Mikio Eto" ], "comment": "14 pages, 5 figures; J. Phys. Soc. Jpn, 72, No.6 (2003), in press", "journal": "J. Phys. Soc. Jpn. 72, 1495 (2003).", "doi": "10.1143/JPSJ.72.1495", "categories": [ "cond-mat.mes-hall" ], "abstract": "We theoretically examine the effects of polaron formation in quantum dots on the transport properties. When a separation between two electron-levels in a quantum dot matches the energy of the longitudinal optical (LO) phonons, the polarons are strongly formed. The Rabi splitting between the levels is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of electrons and phonons.", "revisions": [ { "version": "v1", "updated": "2003-04-10T10:30:03.000Z" } ], "analyses": { "keywords": [ "semiconductor quantum dots", "transport properties", "quantum dot matches", "polaron formation suppresses", "peak structure" ], "tags": [ "journal article" ], "publication": { "journal": "Journal of the Physical Society of Japan", "year": 2003, "month": "Jun", "volume": 72, "number": 6, "pages": 1495 }, "note": { "typesetting": "TeX", "pages": 14, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2003JPSJ...72.1495T" } } }