{
  "id": "cond-mat/0212612",
  "version": "v1",
  "published": "2002-12-27T07:04:43.000Z",
  "updated": "2002-12-27T07:04:43.000Z",
  "title": "Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures",
  "authors": [
    "Yu. G. Arapov",
    "G. I. Harus",
    "V. N. Neverov",
    "A. T. Lonchakov",
    "N. G. Shelushinina",
    "M. V. Yakunin"
  ],
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samples the negative MR is observed in a whole range of magnetic fields up to ~1T at T <=12K, but for the other sample the MR transforms from the negative to positive at B >= 0.2T and T >=1.3K. We attribute such a behavior to the interplay of two types of holes due to partial filling of the second subband. Extrapolation of the observed high-field parabolic MR to B = 0 allows to separate WL and EEI contributions to the total quantum corrections to conductivity at B = 0 resulting for both of our structures in that EEI part is ~2/3 and the WL part is ~1/3.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-12-27T07:04:43.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "electron-electron interaction effects",
      "heterostructures",
      "magnetoresistance",
      "localization",
      "usual logarithmic temperature dependencies"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}