{
  "id": "cond-mat/0210474",
  "version": "v1",
  "published": "2002-10-22T02:06:26.000Z",
  "updated": "2002-10-22T02:06:26.000Z",
  "title": "Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices",
  "authors": [
    "Sergei V. Kalinin",
    "Dawn A. Bonnell",
    "Marcus Freitag",
    "A. T. Johnson"
  ],
  "comment": "11 pages, 3 figures, to be published in Appl. Phys. Lett",
  "doi": "10.1063/1.1531833",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-10-22T02:06:26.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "nanoelectronic devices",
      "tip-gating effect",
      "semiconducting single-wall carbon nanotubes",
      "tip-gating scanning impedance microscopy",
      "electrostatic probe"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 11,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}