{
  "id": "cond-mat/0210104",
  "version": "v2",
  "published": "2002-10-04T14:57:43.000Z",
  "updated": "2002-10-28T14:44:09.000Z",
  "title": "Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide",
  "authors": [
    "S. V. Vyshenski",
    "U. Zeitler",
    "R. J. Haug"
  ],
  "comment": "4 pages, 3 figures",
  "journal": "Pis'ma v ZhETF, vol 76, iss 9, pp.665-668 (2002); aka JETP Letters",
  "doi": "10.1134/1.1538291",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2002-10-28T14:44:09.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "silicon quantum dot",
      "natural oxide",
      "current-voltage characteristics",
      "form geometrically parallel current channels"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}