{
  "id": "cond-mat/0209652",
  "version": "v1",
  "published": "2002-09-27T20:36:34.000Z",
  "updated": "2002-09-27T20:36:34.000Z",
  "title": "Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures",
  "authors": [
    "A. Mobius"
  ],
  "comment": "3 pages including 3 figures, Revtex; submitted to Phys. Rev. B",
  "categories": [
    "cond-mat.dis-nn",
    "cond-mat.mes-hall"
  ],
  "abstract": "For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by Papadakis and Shayegan are reanalyzed. In both cases, the rho(T=const.,n) curves for various values of the temperature T seem to exhibit an offset concerning n, where the related resistivity is close to h/e^2. This offset may result from a peculiarity in rho(T=const.,n) indicating the MIT to be present also at finite T. More detailed experiments are imperative.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-09-27T20:36:34.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "metal-insulator transition",
      "finite temperatures",
      "two-dimensional systems",
      "persistence",
      "charge carrier concentration"
    ],
    "note": {
      "typesetting": "RevTeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2002cond.mat..9652M"
    }
  }
}