{
  "id": "cond-mat/0209559",
  "version": "v1",
  "published": "2002-09-24T14:07:18.000Z",
  "updated": "2002-09-24T14:07:18.000Z",
  "title": "Nonequilibrium spin fluctuations in single-electron transistors",
  "authors": [
    "Jan Martinek",
    "Józef Barnas",
    "Gerd Schön",
    "Saburo Takahashi",
    "Sadamichi Maekawa"
  ],
  "comment": "4 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects play a role. To describe spin fluctuations we generalize the `orthodox' tunneling theory to take into account the electron spin, and show that the transition between consecutive charge states can occur via a high-spin state. This significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures. Recently some of our predictions were confirmed by Fujisawa et al. [Phys. Rev. Lett. 88, 236802 (2002)], who demonstrated experimentally the importance of nonequilibrum spin fluctuations in transport through quantum dots.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-09-24T14:07:18.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "single-electron transistor",
      "nonequilibrium spin fluctuations significantly influence",
      "nonequilibrum spin fluctuations",
      "spin relaxation",
      "relaxation processes"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2002cond.mat..9559M"
    }
  }
}