{
  "id": "cond-mat/0208452",
  "version": "v1",
  "published": "2002-08-23T11:35:10.000Z",
  "updated": "2002-08-23T11:35:10.000Z",
  "title": "Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts",
  "authors": [
    "A. E. Hansen",
    "A. Kristensen",
    "H. Bruus"
  ],
  "comment": "7 pages, 6 figures; to appear in proceedings of ICPS 2002, Edinburgh",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from different GaAs/GaAlAs heterostructures and observed in different experimental set-ups.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-08-23T11:35:10.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "gaas quantum point contacts",
      "temperature dependent deviations",
      "plateau conductance",
      "ideal quantization",
      "strong lateral confinement"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2002cond.mat..8452H"
    }
  }
}