{
  "id": "cond-mat/0207266",
  "version": "v1",
  "published": "2002-07-10T17:46:24.000Z",
  "updated": "2002-07-10T17:46:24.000Z",
  "title": "Shot noise in self-assembled InAs quantum dots",
  "authors": [
    "A. Nauen",
    "I. Hapke-Wurst",
    "F. Hohls",
    "U. Zeitler",
    "R. J. Haug",
    "K. Pierz"
  ],
  "doi": "10.1103/PhysRevB.66.161303",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $\\alpha$ with an average value of $\\alpha \\approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $\\alpha$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-07-10T17:46:24.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "shot noise",
      "embedded self-assembled inas quantum dots",
      "average value",
      "single-electron tunneling regime",
      "gaas-alas-gaas tunneling structure"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}