{
  "id": "cond-mat/0206328",
  "version": "v3",
  "published": "2002-06-18T19:31:39.000Z",
  "updated": "2002-10-30T21:23:34.000Z",
  "title": "Current-voltage Characteristics of Molecular Conductors: Two versus Three Terminal",
  "authors": [
    "Prashant Damle",
    "Titash Rakshit",
    "Magnus Paulsson",
    "Supriyo Datta"
  ],
  "comment": "9 pages, 9 figures. Major changes in text. One new result added (Fig 8). Accepted for publication in IEEE Trans. on Nanotechnology",
  "doi": "10.1109/TNANO.2002.806825",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative to a standard silicon MOSFET. A self-consistent solution of coupled quantum transport and Poisson's equations shows that even for extremely small channel lengths (about 1 nm), a ``well-tempered'' molecular FET demands much the same electrostatic considerations as a ``well-tempered'' conventional MOSFET. In other words, we show that just as in a conventional MOSFET, the gate oxide thickness needs to be much smaller than the channel length (length of the molecule) for the gate control to be effective. Furthermore, we show that a rigid molecule with metallic source and drain contacts has a temperature independent subthreshold slope much larger than 60 mV/decade, because the metal-induced gap states in the channel prevent it from turning off abruptly. However, this disadvantage can be overcome by using semiconductor contacts because of their band-limited nature.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2002-10-30T21:23:34.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "current-voltage characteristics",
      "molecular conductors",
      "rigid molecule",
      "temperature independent subthreshold slope",
      "gate oxide thickness needs"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 9,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}