{
  "id": "cond-mat/0201491",
  "version": "v1",
  "published": "2002-01-26T18:06:13.000Z",
  "updated": "2002-01-26T18:06:13.000Z",
  "title": "Low-field magnetoresistance in GaAs 2D holes",
  "authors": [
    "S. J. Papadakis",
    "E. P. De Poortere",
    "H. C. Manoharan",
    "J. B. Yau",
    "M. Shayegan",
    "S. A. Lyon"
  ],
  "comment": "8 pages, 8 figures",
  "journal": "Phys. Rev. B 65, 245312 (2002)",
  "doi": "10.1103/PhysRevB.65.245312",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \\times 10^{10} \\leq p \\leq 4.0 \\times 10^{11}$ cm$^{-2}$, with primary focus on samples grown on (311)A GaAs substrates. At high densities, $p \\gtrsim 1 \\times 10^{11}$ cm$^{-2}$, we observe a remarkably strong positive magnetoresistance. It appears in samples with an anisotropic in-plane mobility and predominantly along the low-mobility direction, and is strongly dependent on the perpendicular electric field and the resulting spin-orbit interaction induced spin-subband population difference. A careful examination of the data reveals that the magnetoresistance must result from a combination of factors including the presence of two spin-subbands, a corrugated quantum well interface which leads to the mobility anisotropy, and possibly weak anti-localization. None of these factors can alone account for the observed positive magnetoresistance. We also present the evolution of the data with density: the magnitude of the positive magnetoresistance decreases with decreasing density until, at the lowest density studied ($p = 2.5 \\times 10^{10}$ cm$^{-2}$), it vanishes and is replaced by a weak negative magnetoresistance.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2002-01-26T18:06:13.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "gaas 2d holes",
      "low-field magnetoresistance",
      "spin-orbit interaction induced spin-subband",
      "positive magnetoresistance",
      "interaction induced spin-subband population difference"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}