{
  "id": "cond-mat/0111229",
  "version": "v1",
  "published": "2001-11-13T06:16:06.000Z",
  "updated": "2001-11-13T06:16:06.000Z",
  "title": "The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime",
  "authors": [
    "Yu. G. Arapov",
    "G. A. Alshanskii",
    "G. I. Harus",
    "V. N. Neverov",
    "N. G. Shelushinina",
    "M. V. Yakunin",
    "O. A. Kuznetsov"
  ],
  "comment": "Accepted for publication in Nanotechnology",
  "journal": "Nanotechnology 13 (2002) 86-93",
  "doi": "10.1088/0957-4484/13/1/319",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models. For half-integer filling factors the linear temperature dependence of the effective QHE plateau-to-plateau transition width nu_0(T) is observed in contrast to scaling behavior for systems with short-range disorder. The finite T -> 0 width of QHE transitions may be due to an effective low temperature screening of smooth random potential owing to Coulomb repulsion of electrons.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2001-11-13T06:16:06.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall regime",
      "smooth impurity potential",
      "hole spectrum",
      "heterostructures",
      "qhe transitions"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}