{ "id": "cond-mat/0110381", "version": "v1", "published": "2001-10-18T18:27:32.000Z", "updated": "2001-10-18T18:27:32.000Z", "title": "Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors", "authors": [ "M. Ciorga", "M. Pioro-Ladriere", "P. Zawadzki", "P. Hawrylak", "A. S. Sachrajda" ], "comment": "8 pages, 4 figures", "doi": "10.1063/1.1459489", "categories": [ "cond-mat.mes-hall" ], "abstract": "We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. These results indicate new functionalities that may be utilized in nano-spintronic devices in which the spin state is electro-statically controlled via the electron occupation number.", "revisions": [ { "version": "v1", "updated": "2001-10-18T18:27:32.000Z" } ], "analyses": { "subjects": [ "85.35.Gv", "85.35.Ds", "85.30.De", "72.20.Ht", "73.23.Hk" ], "keywords": [ "tunable negative differential resistance", "single electron transistors", "spin blockade", "long spin relaxation time" ], "tags": [ "journal article" ], "publication": { "journal": "Applied Physics Letters", "year": 2002, "month": "Mar", "volume": 80, "number": 12, "pages": 2177 }, "note": { "typesetting": "TeX", "pages": 8, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2002ApPhL..80.2177C" } } }