{
  "id": "cond-mat/0110362",
  "version": "v1",
  "published": "2001-10-18T07:08:17.000Z",
  "updated": "2001-10-18T07:08:17.000Z",
  "title": "Transport signatures of correlated disorder in a two-dimensional electron gas",
  "authors": [
    "T. Heinzel",
    "R. D. Jaeggi",
    "E. Ribeiro",
    "M. v. Waldkirch",
    "K. Ensslin",
    "S. E. Ulloa",
    "G. Medeiros-Ribeiro",
    "P. M. Petroff"
  ],
  "comment": "5 pages, 2 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2001-10-18T07:08:17.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "correlated disorder",
      "transport signatures",
      "high inas dot densities",
      "report electronic transport measurements",
      "two-dimensional electron gases"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2001cond.mat.10362H"
    }
  }
}