{
  "id": "cond-mat/0103144",
  "version": "v2",
  "published": "2001-03-06T19:05:47.000Z",
  "updated": "2001-04-10T02:37:55.000Z",
  "title": "Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect",
  "authors": [
    "W. Pan",
    "H. L. Stormer",
    "D. C. Tsui",
    "L. N. Pfeiffer",
    "K. W. Baldwin",
    "K. W. West"
  ],
  "comment": "new references added",
  "doi": "10.1016/S0038-1098(01)00311-8",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "We study the \\nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6 \\times 10^{11} cm^{-2} with a peak mobility \\mu = 5.5 \\times 10^6 cm^2/Vs. The \\nu=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields as high as 12.6T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at \\nu=5/2.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2001-04-10T02:37:55.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin-polarized ground state",
      "experimental evidence",
      "even-denominator fractional quantum hall effect",
      "heterojunction insulated gate field-effect transistor"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}