{
  "id": "cond-mat/0102415",
  "version": "v1",
  "published": "2001-02-22T22:53:07.000Z",
  "updated": "2001-02-22T22:53:07.000Z",
  "title": "Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's",
  "authors": [
    "Sergey A. Vitkalov"
  ],
  "comment": "5 pages, 4 figures",
  "doi": "10.1103/PhysRevB.64.195336",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the main reason for the experimental observation. Comparison of two band model with experiment provides an upper limit for the electron-electron scattering time $\\tau_{ee}$ in the dilute 2D electron system as a function of electron density $n_s$. The time $\\tau_{ee}$ increases gradually with $n_s$, becoming much greater than the transport scattering time $\\tau_p$ for densities $n_s>4 \\times 10 ^{11}$ cm$^{-2}$. Strong electron-electron scattering is found for $1.22 \\times 10 ^{11} <n_s<3 \\times 10 ^{11}$ cm$^{-2}$, the region which is near to the apparent metal insulator transition.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2001-02-22T22:53:07.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hall coefficient",
      "electron-electron interaction",
      "si-mosfets",
      "dilute 2d electron system",
      "apparent metal insulator transition"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}