{
  "id": "cond-mat/0011139",
  "version": "v1",
  "published": "2000-11-08T16:51:30.000Z",
  "updated": "2000-11-08T16:51:30.000Z",
  "title": "Dephasing of Electrons by Two-Level Defects in Quantum Dots",
  "authors": [
    "Kang-Hun Ahn",
    "Pritiraj Mohanty"
  ],
  "comment": "two-column 9 pages",
  "doi": "10.1103/PhysRevB.63.195301",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The electron dephasing time $\\tau_{\\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we obtain a linear temperature dependence of $1/\\tau_{\\phi}$, consistent with the experimental observation. However, we find that, in order to obtain dephasing times on the order of nanoseconds, the number of two-level defects needs to be substantially larger than the typical concentration in glasses. We also find a finite system-size dependence of $\\tau_{\\phi}$, which can be used to probe the effectiveness of surface-aggregated defects.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2000-11-08T16:51:30.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "linear temperature dependence",
      "two-level defects needs",
      "diffusive quantum dot",
      "standard tunneling model",
      "two-level system"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 9,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}