{
  "id": "cond-mat/0004082",
  "version": "v3",
  "published": "2000-04-05T20:07:47.000Z",
  "updated": "2001-06-28T14:35:54.000Z",
  "title": "Linear response conductance and magneto-resistance of ferromagnetic single-electron transistors",
  "authors": [
    "Arne Brataas",
    "X. H. Wang"
  ],
  "comment": "10 pages, 6 figures. accepted for publication in Phys. Rev. B",
  "doi": "10.1103/PhysRevB.64.104434",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calculated analytically at high temperatures and numerically at low temperatures. The F-F-F magneto-resistance is enhanced by higher order tunneling processes at low temperatures in the 'off' state when the induced charges vanishes. In contrast, in the 'on' state near resonance the magneto-resistance ratio is a non-monotonic function of the inverse temperature.",
  "revisions": [
    {
      "version": "v3",
      "updated": "2001-06-28T14:35:54.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "ferromagnetic single-electron transistors",
      "linear response conductance",
      "magneto-resistance",
      "coulomb charging energy",
      "low temperatures"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}