{
  "id": "2409.09747",
  "version": "v1",
  "published": "2024-09-15T14:33:50.000Z",
  "updated": "2024-09-15T14:33:50.000Z",
  "title": "Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot",
  "authors": [
    "Ning Wang",
    "Shao-Min Wang",
    "Run-Ze Zhang",
    "Jia-Min Kang",
    "Wen-Long Lu",
    "Hai-Ou Li",
    "Gang Cao",
    "Bao-Chuan Wang",
    "Guo-Ping Guo"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2024-09-15T14:33:50.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "natural si/sige quantum dot",
      "gate fidelity",
      "pursuing high-fidelity control",
      "spin qubits",
      "si/sige quantum dot device"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}