{
  "id": "2408.10133",
  "version": "v1",
  "published": "2024-08-19T16:27:21.000Z",
  "updated": "2024-08-19T16:27:21.000Z",
  "title": "Interplay of electronic crystals with integer and fractional Chern insulators in moiré pentalayer graphene",
  "authors": [
    "Dacen Waters",
    "Anna Okounkova",
    "Ruiheng Su",
    "Boran Zhou",
    "Jiang Yao",
    "Kenji Watanabe",
    "Takashi Taniguchi",
    "Xiaodong Xu",
    "Ya-Hui Zhang",
    "Joshua Folk",
    "Matthew Yankowitz"
  ],
  "comment": "8 pages, 4 figures, extended data, 10 extended data figures, 13 supplementary information figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "The rapid development of moir\\'e quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moir\\'e lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moir\\'e unit cell, we see a correlated insulator with a Chern number that can be tuned between $C=0$ and $+1$ by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, $\\nu$. Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moir\\'e lattice. Upon applying a modest magnetic field, a narrow region forms around $\\nu=2/3$ in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional $\\nu$. In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moir\\'e unit cell. Our results establish moir\\'e RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2024-08-19T16:27:21.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "fractional chern insulator",
      "electronic crystals",
      "pentalayer graphene",
      "moire unit cell",
      "fractional quantum anomalous hall effect"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}