{ "id": "2407.21557", "version": "v1", "published": "2024-07-31T12:26:35.000Z", "updated": "2024-07-31T12:26:35.000Z", "title": "Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge", "authors": [ "Takafumi Akiho", "Hiroshi Irie", "Yusuke Nakazawa", "Satoshi Sasaki", "Norio Kumada", "Koji Muraki" ], "comment": "7 pages, 4 figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "We have fabricated a superconductor/semiconductor junction composed of Al and InAs using cleaved edge overgrowth (CEO). By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved heterostructure wafer containing an InAs quantum well (QW), we achieve a superconducting critical field of $\\sim 5$~T, allowing superconductivity and quantum Hall (QH) effects to coexist down to filling factor $\\nu = 3$. Andreev reflection at zero magnetic field shows a conductance enhancement that is limited solely by the Fermi velocity mismatch, demonstrating a virtually barrier-free, high-quality S/Sm junction. Bias spectroscopy in the QH regime reveals a clear bias dependence indicating the superconducting gap, with the reduced downstream resistance demonstrating that the electron-hole Andreev conversion probability consistently exceeds 50\\%. Our results, obtained in a new experimental regime characterized by a clean edge-contacted junction, a much smaller superconducting gap, and a narrow superconducting electrode less than the coherence length, open a new avenue for both theoretical and experimental studies of the interplay between superconductivity and QH effects and the engineering of exotic quasiparticles.", "revisions": [ { "version": "v1", "updated": "2024-07-31T12:26:35.000Z" } ], "analyses": { "keywords": [ "quantum hall regime", "andreev reflection", "cleaved edge", "al/inas junction", "cleaved heterostructure wafer containing" ], "note": { "typesetting": "TeX", "pages": 7, "language": "en", "license": "arXiv", "status": "editable" } } }