{ "id": "2308.00952", "version": "v1", "published": "2023-08-02T05:22:39.000Z", "updated": "2023-08-02T05:22:39.000Z", "title": "Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling", "authors": [ "Bi Hong Tiang", "Yee Sin Ang", "L. K. Ang" ], "comment": "6 pages, 3 figures", "categories": [ "cond-mat.mes-hall", "physics.app-ph" ], "abstract": "We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\\propto (\\hbar\\omega-W)^2+2E_R(\\hbar \\omega-W) -E_R^2/3$, where $\\hbar\\omega$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC parameter respectively. Intriguingly, the RSOC effect substantially improves the QE for strong RSOC materials. For example, the QE of Bi$_2$Se$_3$ and Bi/Si(111) increases, by 149\\% and 122\\%, respectively due to the presence of strong RSOC. By fitting to the photoelectron emission characteristics, the analytical scaling law can be employed to extract the RSOC strength, thus offering a useful tool to characterize the RSOC effect in materials. Importantly, when the traditional Fowler-Dubridge model is used, the extracted results may substantially deviate from the actual values by $\\sim90\\%$, thus highlighting the importance of employing our model to analyse the photoelectron emission especially for materials with strong RSOC. These findings provide a theoretical foundation for the design of photoemitters using Rashba spintronic materials.", "revisions": [ { "version": "v1", "updated": "2023-08-02T05:22:39.000Z" } ], "analyses": { "keywords": [ "rashba spin-orbit coupling", "over-barrier photoelectron emission", "rsoc effect", "rsoc strength", "rashba spintronic materials" ], "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable" } } }