{
  "id": "2303.09260",
  "version": "v1",
  "published": "2023-03-16T12:23:35.000Z",
  "updated": "2023-03-16T12:23:35.000Z",
  "title": "Magnetic-field-induced corner states in quantum spin Hall insulators",
  "authors": [
    "Sergey S. Krishtopenko",
    "Frédéric Teppe"
  ],
  "comment": "7 pages, 3 figures and Supplementary Materials",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We treat the general problem of magnetic-field-induced corner states in quantum spin Hall insulators based on zinc-blende semiconductor quantum wells (QWs). An analysis performed within the \\emph{continuous} Bernevig-Hughes-Zhang (BHZ) model reveals that the gapped edge states are described by ``generalized'' 1D Dirac equation with \\emph{two mass parameters}, whose values depend on crystallographic orientation of the edge and that of the magnetic field. Although the mass parameters do not vanish simultaneously, an analytical solution in the form of ``topological domain wall mode'' confirms the existence of corner state at the intersection of two adjacent edges. Surprisingly, the existence of the corner states induced by an in-plane magnetic field do not require a crystal symmetry of zinc-blende semiconductor QW, making our results universal for any quantum spin Hall insulators with isotropic edge-state g-factor. On the contrary, the corner states induced by an out-of-plane magnetic field arise only due to the absence of an inversion center in zinc-blende semiconductor QWs.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2023-03-16T12:23:35.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum spin hall insulators",
      "magnetic-field-induced corner states",
      "zinc-blende semiconductor qw",
      "zinc-blende semiconductor quantum wells",
      "out-of-plane magnetic field arise"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}