{ "id": "2302.03214", "version": "v1", "published": "2023-02-07T02:55:05.000Z", "updated": "2023-02-07T02:55:05.000Z", "title": "Quantum transport properties of tantalum-oxide resistive switching filaments", "authors": [ "Tímea Nóra Török", "Péter Makk", "Zoltán Balogh", "Miklós Csontos", "András Halbritter" ], "categories": [ "cond-mat.mes-hall" ], "abstract": "Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly atomic dimensions. Such atomic-sized resistive switching filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance channels are considered as a specific device fingerprint. Here, we gain insight into the quantum transmission properties of close-to-atomic-sized resistive switching filaments formed across an insulating Ta$_2$O$_5$ layer through superconducting subgap spectroscopy. This method reveals the transmission density function of the open conduction channels contributing to the device conductance. Our analysis confirms the formation of truly atomic-sized filaments composed of 3-8 Ta atoms at their narrowest cross-section. We find that this diameter remains unchanged upon resistive switching. Instead, the switching is governed by the redistribution of oxygen vacancies within the filamentary volume. The set/reset process results in the reduction/formation of an extended barrier at the bottleneck of the filament which enhances/reduces the transmission of the highly open conduction channels.", "revisions": [ { "version": "v1", "updated": "2023-02-07T02:55:05.000Z" } ], "analyses": { "keywords": [ "tantalum-oxide resistive switching filaments", "quantum transport properties", "volume reaches truly atomic", "reaches truly atomic dimensions", "device volume reaches" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }