{
  "id": "2301.03453",
  "version": "v1",
  "published": "2023-01-09T15:57:08.000Z",
  "updated": "2023-01-09T15:57:08.000Z",
  "title": "How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?",
  "authors": [
    "Robert K. A. Bennett",
    "Eric Pop"
  ],
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci",
    "physics.app-ph"
  ],
  "abstract": "When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the gate capacitance ($C_\\textrm{G}$) becomes smaller than the oxide capacitance ($C_\\textrm{ox}$) due to the quantum capacitance and charge centroid capacitance of the channel. Here, we study the capacitance of monolayer MoS$_\\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial variations in the potential, charge density, and density of states. At 0.5 nm EOT, the monolayer MoS$_\\textrm{2}$ capacitance is smaller than its quantum capacitance, limiting the single-gated $C_\\textrm{G}$ of an n-type channel to between 63% and 78% of $C_\\textrm{ox}$ for gate overdrive voltages between 0.5 and 1 V. Despite these limitations, for dual-gated devices, the on-state $C_\\textrm{G}$ of monolayer MoS$_\\textrm{2}$ is 50% greater than that of silicon at 0.5 nm EOT and more than three times that of InGaAs at 1 nm EOT, indicating that 2D semiconductors are promising for nanoscale devices at future technology nodes.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2023-01-09T15:57:08.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "monolayer mos",
      "quantum effects influence",
      "carrier density",
      "nm eot",
      "quantum capacitance"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}