{
  "id": "2210.16727",
  "version": "v1",
  "published": "2022-10-30T02:46:25.000Z",
  "updated": "2022-10-30T02:46:25.000Z",
  "title": "Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers",
  "authors": [
    "W. G. Wang",
    "C. Ni",
    "A. Ozbay",
    "L. R. Shah",
    "X. Fan",
    "X. M. Kou",
    "E. R. Nowak",
    "J. Q. Xiao"
  ],
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2022-10-30T02:46:25.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "magnetic tunnel junctions",
      "spin-polarized transport",
      "band gap semiconductor znte barrier",
      "wide band gap semiconductor znte",
      "nonlinear i-v characteristic curve"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}