{ "id": "2203.14575", "version": "v1", "published": "2022-03-28T08:41:50.000Z", "updated": "2022-03-28T08:41:50.000Z", "title": "Impact of in-situ controlled disorder screening on fractional quantum Hall effects and composite-fermion transport", "authors": [ "T. Akiho", "K. Muraki" ], "comment": "6 pages, 4 figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "We examine the impact of random potential due to remote impurites (RIs) and its in-situ controlled screening on fractional quantum Hall effects (FQHEs) around Landau-level filling factor $\\nu = 1/2$. The experiment is made possible by using a dual-gate GaAs quantum well (QW) that allows for the independent control of the density $n_{e}$ of the two-dimensional electron system in the QW and that ($n_\\text{SL}$) of excess electrons in the modulation-doping superlattice. As the screening is reduced by decreasing $n_\\text{SL}$ at a fixed $n_{e}$, we observe a decrease in the apparent energy gap of the FQHEs deduced from thermal activation, which signifies a corresponding increase in the disorder broadening $\\Gamma$ of composite fermions (CFs). Interestingly, the increase in $\\Gamma$ is accompanied by a noticeable increase in the longitudinal resistivity at $\\nu = 1/2$ ($\\rho_{1/2}$), with a much stronger correlation with $\\Gamma$ than electron mobility $\\mu$ has. The in-situ control of RI screening enables us to disentangle the contributions of RIs and background impurities (BIs) to $\\rho_{1/2}$, with the latter in good agreement with the CF theory. We construct a scaling plot that helps in estimating the BI contribution to $\\rho_{1/2}$ for a given set of $n_{e}$ and $\\mu$.", "revisions": [ { "version": "v1", "updated": "2022-03-28T08:41:50.000Z" } ], "analyses": { "keywords": [ "fractional quantum hall effects", "in-situ controlled disorder screening", "composite-fermion transport", "apparent energy gap", "dual-gate gaas quantum" ], "note": { "typesetting": "TeX", "pages": 6, "language": "en", "license": "arXiv", "status": "editable" } } }