{ "id": "2201.08637", "version": "v1", "published": "2022-01-21T10:52:55.000Z", "updated": "2022-01-21T10:52:55.000Z", "title": "A single hole spin with enhanced coherence in natural silicon", "authors": [ "N. Piot", "B. Brun", "V. Schmitt", "S. Zihlmann", "V. P. Michal", "A. Apra", "J. C. Abadillo-Uriel", "X. Jehl", "B. Bertrand", "H. Niebojewski", "L. Hutin", "M. Vinet", "M. Urdampilleta", "T. Meunier", "Y. -M. Niquet", "R. Maurand", "S. De Franceschi" ], "categories": [ "cond-mat.mes-hall" ], "abstract": "Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $\\mu$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.", "revisions": [ { "version": "v1", "updated": "2022-01-21T10:52:55.000Z" } ], "analyses": { "keywords": [ "single hole spin", "enhanced coherence", "natural silicon metal-oxide-semiconductor device", "coherence time", "efficient electric-dipole spin control" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }