{
  "id": "2110.05366",
  "version": "v2",
  "published": "2021-10-11T15:51:21.000Z",
  "updated": "2022-06-14T01:52:05.000Z",
  "title": "Monte Carlo simulations of spin transport in nanoscale In$_{0.7}$Ga$_{0.3}$As transistors: Temperature and size effects",
  "authors": [
    "B Thorpe",
    "K Kalna",
    "S Schirmer"
  ],
  "journal": "Semicond. Sci. Technol. 37 075009 (2022)",
  "doi": "10.1088/1361-6641/ac70f0",
  "categories": [
    "cond-mat.mes-hall",
    "quant-ph"
  ],
  "abstract": "Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin-orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length In$_{0.7}$Ga$_{0.3}$As MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2022-06-14T01:52:05.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "monte carlo simulations",
      "spin transport",
      "monte carlo device simulations",
      "spin-dependent drain current modulation",
      "size effects"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "IOP"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}