{
  "id": "2107.08365",
  "version": "v1",
  "published": "2021-07-18T04:55:04.000Z",
  "updated": "2021-07-18T04:55:04.000Z",
  "title": "Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well",
  "authors": [
    "Chang Niu",
    "Gang Qiu",
    "Yixiu Wang",
    "Mengwei Si",
    "Wenzhuo Wu",
    "Peide D. Ye"
  ],
  "comment": "Submitted to Nano Letters",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor 4, 6, and 8 are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2021-07-18T04:55:04.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "bilayer quantum hall states",
      "n-type wide tellurium quantum",
      "n-type te hall-bar devices",
      "electron layers"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}