{
  "id": "2106.05351",
  "version": "v1",
  "published": "2021-06-09T19:31:06.000Z",
  "updated": "2021-06-09T19:31:06.000Z",
  "title": "Quantum Efficiency and Oscillator Strength of InGaAs Quantum Dots for Single-Photon Sources emitting in the Telecommunication O-Band",
  "authors": [
    "Jan Große",
    "Pawel Mwrowinski",
    "Nicole Srocka",
    "Stephan Reitzenstein"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL) these QDs can be employed for the manufacturing of single-photon sources (SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by determining the radiative and non-radiative decay rate under variation of the optical density of states at the position of the QD as proposed and applied in J. Johansen et al. Phys. Rev. B 77, 073303 (2008) for InGaAs QDs emitting at wavelengths below 1 $\\mu$m. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modelling the radiative and nonradiative decay rates dependence on the capping layer thickness, we determine an OS of 24.6 $\\pm$ 3.2 and a high IQE of about (85 $\\pm$ 10)% for the long-wavelength InGaAs QDs.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2021-06-09T19:31:06.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "ingaas quantum dots",
      "single-photon sources emitting",
      "oscillator strength",
      "quantum efficiency",
      "telecommunication o-band"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}