{
  "id": "2106.04719",
  "version": "v1",
  "published": "2021-06-08T22:30:49.000Z",
  "updated": "2021-06-08T22:30:49.000Z",
  "title": "Tunable spin-orbit coupling in two-dimensional InSe",
  "authors": [
    "A. Ceferino",
    "S. J. Magorrian",
    "V. Zólyomi",
    "D. A. Bandurin",
    "A. K. Geim",
    "A. Patanè",
    "Z. D. Kovalyuk",
    "Z. R. Kudrynskyi",
    "I. V. Grigorieva",
    "V. I. Fal'ko"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\\mathbf{k\\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2021-06-08T22:30:49.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "tunable spin-orbit coupling",
      "two-dimensional inse",
      "density functional theory computations",
      "soc strength",
      "conduction band edge"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}