{ "id": "2101.01790", "version": "v1", "published": "2021-01-05T21:26:39.000Z", "updated": "2021-01-05T21:26:39.000Z", "title": "Current Switching of Valley Polarization in Twisted Bilayer Graphene", "authors": [ "Xuzhe Ying", "Mengxing Ye", "Leon Balents" ], "categories": [ "cond-mat.mes-hall", "cond-mat.str-el" ], "abstract": "Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\\'e bands with opposite Chern number [Science 367, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.", "revisions": [ { "version": "v1", "updated": "2021-01-05T21:26:39.000Z" } ], "analyses": { "keywords": [ "valley polarization", "twisted bilayer graphene", "current switching", "current induced valley density difference", "small dc current" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }