{
  "id": "2011.07292",
  "version": "v1",
  "published": "2020-11-14T12:42:04.000Z",
  "updated": "2020-11-14T12:42:04.000Z",
  "title": "Gated two-dimensional electron gas in magnetic field: nonlinear versus linear regimes",
  "authors": [
    "N. Dyakonova",
    "M. Dyakonov",
    "Z. D. Kvon"
  ],
  "comment": "6 pages, 8 figures",
  "categories": [
    "cond-mat.mes-hall",
    "physics.app-ph"
  ],
  "abstract": "We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting channel. The experimental results obtained in the non-linear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-11-14T12:42:04.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "linear regime",
      "mobility gated two-dimensional electron gas",
      "high mobility gated two-dimensional electron",
      "field effect transistor",
      "hall bar geometry"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}