{
  "id": "2010.09192",
  "version": "v1",
  "published": "2020-10-19T03:33:59.000Z",
  "updated": "2020-10-19T03:33:59.000Z",
  "title": "Theory of the Strain Engineering of Graphene Nanoconstrictions",
  "authors": [
    "Masahiko Hayashi",
    "Hideo Yoshioka",
    "Hikari Tomori",
    "Akinobu Kanda"
  ],
  "comment": "4 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphene nanoconstrictions can be a good platform for this technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot type quantum interference dominates the electrical conduction at low bias voltages. We argue that these two effects have different strain dependence; the pseudo-gauge field contribution is symmetric with respect to positive (tensile) and negative (compressive) strain, whereas the quantum interference is antisymmetric. As a result, a peculiar strain dependence of the conductance appears even at room temperatures.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-10-19T03:33:59.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene nanoconstrictions",
      "strain engineering",
      "pseudo-gauge field reflects dirac electrons",
      "fabry-perot type quantum interference dominates",
      "strain dependence"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}