{
  "id": "2010.01352",
  "version": "v1",
  "published": "2020-10-03T13:24:28.000Z",
  "updated": "2020-10-03T13:24:28.000Z",
  "title": "Control of the exciton valley dynamics in van der Waals heterostructures",
  "authors": [
    "A. I. Prazdnichnykh",
    "M. M. Glazov",
    "L. Ren",
    "C. Robert",
    "B. Urbaszek",
    "X. Marie"
  ],
  "comment": "12 pages, 6 figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci",
    "cond-mat.other"
  ],
  "abstract": "The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the opposite circular polarizations resulting in the longitudinal-transverse splitting of excitons propagating in the monolayer plane. Here we study theoretically the effect of the dielectric environment on the long-range exchange interaction and demonstrate how the encapsulation in the hexagonal boron nitride modifies the exciton longitudinal-transverse splitting. We calculate the exciton spin/valley polarization relaxation due to the long-range exchange interaction and demonstrate that the variation of the monolayer environment results in significant, up to five-fold, enhancement of the exciton valley polarization lifetime.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-10-03T13:24:28.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "van der waals heterostructures",
      "exciton valley dynamics",
      "long-range exchange interaction",
      "exciton valley polarization lifetime",
      "transition metal dichalcogenides monolayers"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 12,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}