{
  "id": "2009.12439",
  "version": "v1",
  "published": "2020-09-25T21:16:18.000Z",
  "updated": "2020-09-25T21:16:18.000Z",
  "title": "Spin-selective resonant tunneling induced by Rashba spin-orbit interaction in semiconductor nanowire",
  "authors": [
    "J. Pawłowski",
    "G. Skowron",
    "P. Szumniak",
    "S. Bednarek"
  ],
  "comment": "5 pages, 3 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We consider a single electron confined within a quantum wire in a system of two electrostatically-induced QDs defined by nearby gates. The time-varying electric field, of single GHz frequency, perpendicular to the quantum wire, is used to induce the Rashba coupling and enable spin-dependent resonant tunneling of the electron between two adjacent potential wells with fidelity over 99.5%. This effect can be used for the high fidelity all-electrical electron-spin initialization or readout in the spin-based quantum computer. In contrast to other spin initialization methods, our technique can be performed adiabatically without increase in the energy of the electron. Our simulations are supported by a realistic self-consistent time-dependent Poisson-Schroedinger calculations.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-09-25T21:16:18.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "rashba spin-orbit interaction",
      "spin-selective resonant tunneling",
      "semiconductor nanowire",
      "realistic self-consistent time-dependent poisson-schroedinger calculations",
      "high fidelity all-electrical electron-spin initialization"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}