{ "id": "2008.11971", "version": "v1", "published": "2020-08-27T07:54:40.000Z", "updated": "2020-08-27T07:54:40.000Z", "title": "Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs", "authors": [ "S. E. Dizhur", "I. N. Kotel'nikov", "E. M. Dizhur" ], "comment": "This is a post-peer-review, pre-copyedit version of an article published in Journal of Communications Technology and Electronics, 2006, Vol. 51, No. 5, pp. 588-595. The final authenticated version is available online at: https://doi.org/10.1134/S1064226906050123", "journal": "Journal of Communications Technology and Electronics, 2006, Vol. 51, No. 5, pp. 588-595", "doi": "10.1134/S1064226906050123", "categories": [ "cond-mat.mes-hall", "cond-mat.other" ], "abstract": "Al-$\\delta$-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of LO-phonon is observed. This phenomenon occurs when a new subband is involved in the tunneling process and when intersubband transitions of the electrons in a 2D-system with the emission of LO-phonon are added to the inelastic tunneling within a single subband. It is shown that, under the conditions of an intersubband polaron resonance, the reflection processes dominate during tunneling into the delta-layer. If, however, tunneling from the delta-layer occurs, the reflection processes are observed when two subbands are occupied.", "revisions": [ { "version": "v1", "updated": "2020-08-27T07:54:40.000Z" } ], "analyses": { "keywords": [ "2d electron system", "intersubband polaron resonance", "reflection processes dominate", "delta-layer occurs", "single subband" ], "tags": [ "journal article" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }