{
  "id": "2006.11797",
  "version": "v1",
  "published": "2020-06-21T13:26:56.000Z",
  "updated": "2020-06-21T13:26:56.000Z",
  "title": "Strong localization in a suspended monolayer graphene by intervalley scattering",
  "authors": [
    "Cenk Yanik",
    "Vahid Sazgari",
    "Abdulkadir Canatar",
    "Yaser Vaheb",
    "Ismet I. Kaya"
  ],
  "comment": "4 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\\approx0.4~T$ accompanied by broken-symmetry-induced $\\nu=0,\\pm1$ plateaux confirms the presence of intervalley scatterers.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-06-21T13:26:56.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "strong localization",
      "intervalley scattering",
      "high mobility suspended monolayer graphene",
      "graphene device",
      "ultra clean graphene surface"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}