{ "id": "2001.10263", "version": "v1", "published": "2020-01-28T11:10:00.000Z", "updated": "2020-01-28T11:10:00.000Z", "title": "Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness", "authors": [ "S. Hubmann", "G. V. Budkin", "M. Urban", "V. V. Bel'kov", "A. P. ~Dmitriev", "J. Ziegler", "D. A. Kozlov", "N. N. Mikhailov", "S. A. Dvoretsky", "Z. D. Kvon", "D. Weiss", "S. D. Ganichev" ], "categories": [ "cond-mat.mes-hall" ], "abstract": "We report on the observation of terahertz (THz) radiation induced band-to-band impact ionization in \\HgTe quantum well (QW) structures of critical thickness, which are characterized by a nearly linear energy dispersion. The THz electric field drives the carriers initializing electron-hole pair generation. The carrier multiplication is observed for photon energies less than the energy gap under the condition that the product of the radiation angular frequency $\\omega$ and momentum relaxation time $\\tau_{\\text l}$ larger than unity. In this case, the charge carriers acquire high energies solely because of collisions in the presence of a high-frequency electric field. The developed microscopic theory shows that the probability of the light impact ionization is proportional to $\\exp(-E_0^2/E^2)$, with the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. As observed in experiment, it exhibits a strong frequency dependence for $\\omega \\tau \\gg 1$ characterized by the characteristic field $E_0$ linearly increasing with the radiation frequency $\\omega$.", "revisions": [ { "version": "v1", "updated": "2020-01-28T11:10:00.000Z" } ], "analyses": { "keywords": [ "hgte quantum wells", "critical thickness", "terahertz radiation", "initializing electron-hole pair generation", "induced band-to-band impact ionization" ], "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable" } } }