{
  "id": "1912.10482",
  "version": "v1",
  "published": "2019-12-22T17:17:39.000Z",
  "updated": "2019-12-22T17:17:39.000Z",
  "title": "Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure",
  "authors": [
    "J. Sonntag",
    "J. Li",
    "A. Plaud",
    "A. Loiseau",
    "J. Barjon",
    "J. H. Edgar",
    "C. Stampfer"
  ],
  "comment": "7 pages, 4 figures",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and related 2D materials, but at the same time very hard to replace. Here we report on a method of growth at atmospheric pressure as a true alternative for producing BN for high quality graphene/BN heterostructures. The process is not only more scalable, but also allows to grow isotopically purified BN crystals. We employ Raman spectroscopy, cathodoluminescence, and electronic transport measurements to show the high-quality of such monoisotopic BN and its potential for graphene-based heterostructures. The excellent electronic performance of our heterostructures is demonstrated by well developed fractional quantum Hall states, ballistic transport over distances around $10\\,\\mathrm{\\mu m}$ at low temperatures and electron-phonon scattering limited transport at room temperature.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-12-22T17:17:39.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "monoisotopic boron-nitride grown",
      "excellent electronic transport",
      "atmospheric pressure",
      "heterostructures",
      "isotopically purified bn crystals"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}