{
  "id": "1912.08365",
  "version": "v1",
  "published": "2019-12-18T03:31:01.000Z",
  "updated": "2019-12-18T03:31:01.000Z",
  "title": "Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot",
  "authors": [
    "Xin Zhang",
    "Rui-Zi Hu",
    "Hai-Ou Li",
    "Fang-Ming Jing",
    "Yuan Zhou",
    "Rong-Long Ma",
    "Ming Ni",
    "Gang Luo",
    "Gang Cao",
    "Gui-Lei Wang",
    "Xuedong Hu",
    "Hong-Wen Jiang",
    "Guang-Can Guo",
    "Guo-Ping Guo"
  ],
  "comment": "13 pages,4 figures",
  "categories": [
    "cond-mat.mes-hall",
    "quant-ph"
  ],
  "abstract": "It is well known that for Si quantum dots (QDs), at a certain magnetic field that is commonly referred to as the \"hot spot\", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of ~78 {\\mu}eV, this \"hot spot\" spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9{\\deg} from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180{\\deg} periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to ~268 {\\mu}eV.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-12-18T03:31:01.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "silicon quantum dot",
      "spin-valley mixing",
      "giant anisotropy",
      "electron spin relaxation rate",
      "hot spot"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 13,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}