{ "id": "1909.08778", "version": "v1", "published": "2019-09-19T02:23:38.000Z", "updated": "2019-09-19T02:23:38.000Z", "title": "Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide", "authors": [ "Berk Diler", "Samuel J. Whiteley", "Christopher P. Anderson", "Gary Wolfowicz", "Marie E. Wesson", "Edward S. Bielejec", "F. Joseph Heremans", "David Awschalom" ], "comment": "23 pages, 4 figures", "categories": [ "quant-ph", "cond-mat.mes-hall", "cond-mat.mtrl-sci" ], "abstract": "Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.", "revisions": [ { "version": "v1", "updated": "2019-09-19T02:23:38.000Z" } ], "analyses": { "keywords": [ "coherent control", "commercial silicon carbide", "high-fidelity readout", "chromium ions", "report t1 times greater" ], "note": { "typesetting": "TeX", "pages": 23, "language": "en", "license": "arXiv", "status": "editable" } } }