{
  "id": "1908.08575",
  "version": "v1",
  "published": "2019-08-22T19:52:09.000Z",
  "updated": "2019-08-22T19:52:09.000Z",
  "title": "Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators",
  "authors": [
    "A. Dyrdał",
    "J. Barnaś",
    "A. Fert"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-08-22T19:52:09.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "minimal model",
      "bi-linear magnetoresistance",
      "topological insulators",
      "surface states",
      "current-induced spin polarization"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}