{
  "id": "1907.07549",
  "version": "v1",
  "published": "2019-07-17T14:43:22.000Z",
  "updated": "2019-07-17T14:43:22.000Z",
  "title": "Low-frequency charge noise in Si/SiGe quantum dots",
  "authors": [
    "Elliot J. Connors",
    "JJ Nelson",
    "Haifeng Qiao",
    "Lisa F. Edge",
    "John M. Nichol"
  ],
  "comment": "8 pages, 5 figures",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlapping gates. We find that charge noise increases with aluminum oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a non-uniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a non-uniform distribution of two-level systems near the surface of the semiconductor.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-07-17T14:43:22.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "two-level systems",
      "non-uniform distribution",
      "si/sige quantum dots originates",
      "quantum dot experiences noise",
      "aluminum-oxide gate dielectric thickness"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 8,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}