{
  "id": "1902.10262",
  "version": "v1",
  "published": "2019-02-26T23:07:33.000Z",
  "updated": "2019-02-26T23:07:33.000Z",
  "title": "Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level",
  "authors": [
    "W. Pan",
    "W. Kang",
    "M. P. Lilly",
    "J. L. Reno",
    "K. W. Baldwin",
    "K. W. West",
    "L. N. Pfeiffer",
    "D. C. Tsui"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The HIGFET was specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7 ... and its particle-hole conjugate states at filling factors 1 - nu = 2/3, 3/5, 4/7 ... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1 - nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-02-26T23:07:33.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "lowest landau level",
      "fractional quantum hall effect",
      "particle-hole symmetry",
      "fqhe states",
      "constant magnetic field"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}